2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics. 2N Central Semiconductor Bipolar Transistors – BJT NPN Silicon Power Transistor datasheet, inventory, & pricing. 2N from Texas Instruments High-Performance Analog. Find the PDF Datasheet, Specifications and Distributor Information.
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Commons category link from Wikidata. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.
An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor 2n305 the 2N Modern 2N datasheets often, but not always, specify f T of 2. Retrieved 7 November The 2N remains very 2nn3054 as a series pass transistor in linear power supplies and is still used in for medium- current 2n0354 high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.
The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.
Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.
2n30054 are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. Variants with higher voltage ratings e.
2N NPN TO transistor 90 V 4 A 25 W at reichelt elektronik
In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N Graf; William Sheets This page was last edited on 22 Novemberat The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.
The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.
Build your own low-power transmitters: It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them.
KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.
2N3054 Datasheet, Equivalent, Cross Reference Search
It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. Views Read Edit View history.
The exact performance characteristics depend datashdet the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0. The art of electronics 2nd ed. Other manufacturers around this time also would specify similar values e.
Retrieved from ” https: RCA by had changed their specification to give 2.
2N3054 Datasheet PDF
Modern successors to the 2N can be much more suitable in fast-switching circuits or darasheet audio power amplifiers. It often has a transition frequency of around 3. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.
Also the higher frequency response has improved performance when used in audio amplifiers.
The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.
The robot builder’s bonanza 2nd ed. The KD have higher power and higher current than 2N In other projects Wikimedia Commons. The total power dissipation written P D in most American datasheets, P tot in European datsheet depends on the heatsink to which the 2N is connected.
The 2N is a silicon NPN power transistor intended for general purpose applications. It was produced exclusively by the Czechoslovakian electronics company Tesla.
Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.
Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.